Part Number Hot Search : 
12000 F2001 ISL62 58X25 P72804S2 25LC0 100FC 200CA
Product Description
Full Text Search
 

To Download HBR1020CJR Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? HBR1020CJR pb free plating product HBR1020CJR 10.0 ampere heatsink tandem polarity schottky half bridge rectifier ? 2006 thinki semiconductor co., ltd. pb features high current capability case: heatsink to-220cs internal ceramic insulated high surge current capability weight: 2.2 gram approximately polarity: as marked on diode body method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current epoxy: ul 94v-0 rate flame retardant to-220cs unit:mm application inverters,free wheeling and polarity protection high frequency smps,telecom smps and ups car audio amplifiers and sound device systems etc.. matured hmbr sky technology case series tandem polarity 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ http://www.thinkisemi.com/ page 1/2 rev.05 internal ceramic insulated package outline i f(av) 10a v rrm 200v(2x100v) t j 175 v f(max) 0.70v @tj=125 symbol characteristics i (av) maximum average forward rectified current @t c =150 c i fsm maximum ratings 10 200 a a unit o maximum forward voltage @i f =10a @t j =25 c f =10a @t j =125 c v f i r maximum dc reverse current at rated dc blocking voltage @t j =25 c @t j =125 c t j operating temperature range 0.85 0.70 10 5 1.9 -55 to +175 -40 to +150 v ua o o o c/w o c o o peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) c o t stg storage temperature range r th(j-c) thermal resistance from junction to case ma @i v v rrm repetitive peak reverse voltage maximum dc blocking voltage v dc v per device(2x100v) per diode 200 100 v (series connection) absolute ratings (tc=25 ) note: 1. 300us pulse width, duty cycle 2%. 2. thermal resistance junction to case. measured at 1.0mhz and applied reverse voltage of 4.0v dc. (note 1) (note 2)
? HBR1020CJR electrical characteristics (curves) i r vs v r i f vs v f i f(av) vs t c c t vs v r (per diode) (per diode) ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/2 rev.05


▲Up To Search▲   

 
Price & Availability of HBR1020CJR

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X